|
 |
Vapor Chamber
Caption:
Close up view of the deposition chamber of a chemical vapor deposition reactor used to deposit a compositional spread of metal oxides (TiO2, SnO2, and HfO2). Each of the individual precursors (anhydrous titanium, tin and hafnium nitrate) are sprayed from one of the three nozzles which are approximately 1cm above the silicon substrate.
This work was supported by National Science Foundation grant CHE 00-76141. For further information about this research, see "New Materials Key to Shrinking Memory Devices," a story in the NSF News Media Tipsheet for March 4, 2002.
(Preview Only)
|
| Credit: |
Photo by Wayne L. Gladfelter |
| Decade of Image: |
2000 - 2009 |
|
Categories:
MATERIALS RESEARCH / General
Formats Available:
Restrictions:
No additional restrictions--beyond NSF's general restrictions--have been placed on this image. For a list of general restrictions that apply to this and all images in the NSF Image Library, see the section "Conditions".
|
