Title: INT 97-20  NSF/Tokyo Report: Exploring Electron Beam Assisted Ale and
         P-Type Conductivity Control of III-V Nitrides
Date: 5/21/97



The National Science Foundation's offices in Tokyo and in Paris periodically
report on developments abroad that are related to the Foundation's mission.
These documents present facts for the use of NSF program managers and policy
makers; they are not statements of NSF policy.

Special Scientific Report #97-14 (May 09, 1997)

EXPLORING ELECTRON BEAM ASSISTED ALE AND P-TYPE CONDUCTIVITY CONTROL OF  III-V
NITRIDES

The following report was submitted by Dr. George J. Collins, Professor of
Electrical Engineering, Colorado State University, Fort Collins, CO 80523. Dr.
Collins is in the second year of a three year collaborative study with
Professor Shiro Sakai of Tokushima University, Tokushima, Japan. Dr. Collins'
participation in the project is supported by the NSF Japan and Korea Program;
Professor Sakai's support is provided by the Japan Society for the Promotion
of Science (JSPS). This project is one of the joint projects supported under
the U.S.-Japan Cooperative Science Program. Dr. Collins can be reached via
email at: gcollins@vines.colostate.edu

Interim Report:

This project combines material research that the Japanese researchers have
developed and a new technique, electron beam assisted ALE proposed by the US
researchers, which enables preparation of III-V Nitride materials.  The
objective of this joint research is to explore new III-V compound
semiconductors incorporating nitrogen and other group V elements, such as
GaPxN1-x and InAsxN1-x.  These materials are expected to exhibit very novel
electronic properties such as very narrow or even negative bandgap energy, and
hence are electronically metals even though their constituents and atomic
structures are those of semiconductors.  These peculiar features can be
applied in fabricating light detectors and light sources in the far IR region
and in designing totally new classes of optical and electronic devices.